Above-Complementary Metal--Oxide--Semiconductor Metal Pattern Technique for Postfabrication Tuning of On-Chip Inductor Characteristics
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概要
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In the design of radio frequency (RF) circuits, modifying the characteristics of an inductor in efficient way is required to realize rapid prototyping of RF system-on-a-chip (SoC). We propose an above-complementary-metal--oxide--semiconductor (above-CMOS) metal pattern technique. In this technique, metal patterns are formed using a simple process on the passivation layer above the on-chip inductor. Since the metal pattern with different shapes has different effects, we can tune the characteristics of an on-chip inductor by forming various metal patterns in a chip-by-chip manner. This method can experimentally create various inductors from an identical on-chip inductor. Therefore, the optimization of inductor characteristics and related circuit performance can be carried out in a short period and at a low cost on a trial-and-error basis, which is very effective for rapid prototyping of RF SoCs. Adjustment of the oscillation frequency of the voltage-controlled oscillator using this technique and the technique of modeling the above-CMOS metal pattern are also described in this paper.
- 2011-04-25
著者
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Kotani Koji
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Kotani Koji
Department of Electronics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Sugimoto Atsuo
Department of Electronics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Omiya Yutaka
Department of Electronics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Ito Takashi
Solution Research Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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