Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization
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概要
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Four-terminal (4T) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) having both front and back gates were fabricated to investigate the effect of the internal tensile strain induced by continuous-wave (CW) laser lateral crystallization (CLC) on the carrier mobility. The tensile strain values at the surfaces and back interfaces were estimated to be approximately 0.3% and over 0.4%, respectively. In both front and back channel operations, the successful operation of a variable threshold voltage ($V_{\text{th}}$) scheme was confirmed. Front and back channel effective electron mobilities of 4T CLC poly-Si TFTs were evaluated under bias conditions so as not to form an inversion layer on the $V_{\text{th}}$-control gate side. Because of the larger tensile strain at the back interface, the back channel effective electron mobility was 1.2 times larger than the front channel effective mobility.
- 2011-04-25
著者
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Kotani Koji
Graduate School Of Engineering Tohoku University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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FUJII Shuntaro
Graduate School of Engineering, Tohoku University
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Ito Takashi
Solution Research Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kotani Koji
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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