Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
The nanograting channel structure was introduced to a polycrystalline silicon thin-film transistor (poly-Si TFT) to enhance the current drivability. With the formation of the nanograting in the channel region, the effective width was enhanced without the increase in the planar area. At the same overdrive voltage, the drain current of the nanograting TFTs was larger than that of the conventional planar ones at the same planar dimension. In addition to the increase in the effective channel width, the drivability enhancement was further caused by the increase in electron mobility. The increase in the electron field-effect mobility by the nanograting structure was 42% at the maximum.
- 2010-04-25
著者
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Kotani Koji
Graduate School Of Engineering Tohoku University
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ZHU Xiaoli
Graduate School of Engineering, Tohoku University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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Koji Kotani
Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Takashi Ito
Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Shin-Ichiro Kuroki
Graduate School of Engineering, Tohoku University, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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