Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films
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概要
- 論文の詳細を見る
In continuous-wave (cw) laser lateral crystallization of amorphous silicon (a-Si) thin films, the effects of cap SiO2 thin films were investigated. The thickness of the cap SiO2 film was 10 nm, which is sufficiently thin to exclude anti reflection effect. The cap SiO2 thin films suppressed the generation of voids during the cw laser crystallization, and the available crystallization condition to form lateral-crystallized polycrystalline silicon (poly-Si) thin films was expanded. By using the cap SiO2 thin films, the surface of the lateral-crystallized poly-Si thin films became smooth, and an average roughness of 1.3 nm was achieved.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
-
Kotani Koji
Graduate School Of Engineering Tohoku University
-
ITO Takashi
Graduate School of Engineering, Tohoku University
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Numata Masayuki
Graduate School Of Engineering Tohoku University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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FUJII Shuntaro
Graduate School of Engineering, Tohoku University
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