Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization
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概要
- 論文の詳細を見る
In recent ultra large-scale integration (ULSI), Cu wiring and low-$k$ dielectrics are used to reduce resistive capacitive (RC) delay in interconnects. Cu diffusion barrier layers, such as SiC and SiCN, have relatively high $k$-values, thus they decrease effective $k$-values ($k_{\text{eff}}$) of dielectrics. For this issue, we propose a new amorphous hydrocarbon film (a-CHx) as a Cu barrier dielectric deposited using a microwave-excited plasma reactor with a showerhead. Low ion bombardments and optimum deposition gases gave an excellent film, which achieved low leakage current and thermal resistance simultaneously. This film showed Cu diffusion barrier ability at 350 °C and a lifetime of more than 10 years lifetime at 0.2 MV/cm, which is sufficient for next-generation interlayer dielectric films.
- 2008-04-25
著者
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ISHIKAWA Hiraku
TOKYO ELECTRON LTD.
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NOZAWA Toshihisa
TOKYO ELECTRON LTD.
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MATSUOKA Takaaki
TOKYO ELECTRON LTD.
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ITO Takashi
Graduate School of Engineering, Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Matsuoka Takaaki
Tokyo Electron Technology Development Institute, Inc., Sendai 981-3131, Japan
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Nozawa Toshihisa
Tokyo Electron Technology Development Institute, Inc., Sendai 981-3131, Japan
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Ito Takashi
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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