High-Quality SiO2 Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas

概要

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The plasma enhanced chemical vapor deposition (PECVD) of extremely high-quality SiO2 at low temperature below 400 °C has been developed using tetraethoxysilane (TEOS). Plasma of TEOS and Ar, O2 gases was generated by a microwave (2.45 GHz) radial-line-slot-antenna (RLSA) system. The RLSA Plasma is a sort of surface-wave-plasma (SWP) and it realizes lower electron temperature ($T_{\text{e}}$) with higher electron density ($N_{\text{e}}$) at the wafer position compared with conventional PECVD reactors. The physical properties were examined by 5% HF wet etching rates and thermal desorption spectroscopy. It was confirmed that the RLSA TEOS film were much better than conventional PECVD films and a high temperature oxide (HTO) with 900 °C N2 anneal treatment. Electrical properties of dielectric leakage, breakdown and negative bias charge-to-breakdown ($Q_{\text{bd}}$) test also performed. The RLSA TEOS films showed far better properties among the conventional films and in much the same quality as a wet-thermal oxide grown at 950 °C. It was considered that all these properties were owing to the RLSA plasma’s uniqueness of lower plasma damage and oxidization efficiency for precursors.
2009-12-25