Ueda Hirokazu | Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan

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概要

• Ueda Hirokazuの詳細を見る
• 同名の論文著者
• Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japanの論文著者

関連著者

• Ueda Hirokazu

  Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan

• SUGAWA Shigetoshi

  New Industry Creation Hatchery Center, Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Nomura Takehiko

  Advanced Power Device Research Association, Yokohama 220-0073, Japan

• Kambayashi Hiroshi

  Advanced Power Device Research Association, Yokohama 220-0073, Japan

• NOZAWA Toshihisa

  TOKYO ELECTRON LTD.

• Teramoto Akinobu

  New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

• Tanaka Yoshinobu

  Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan

• Sugawa Shigetoshi

  New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

• Harada Katsushige

  Tokyo Electron Tohoku Ltd., Nirasaki, Yamanashi 407-0192, Japan

• Morozumi Yuichiro

  Tokyo Electron Tohoku Ltd., Nirasaki, Yamanashi 407-0192, Japan

• Hasebe Kazuhide

  Tokyo Electron Tohoku Ltd., Nirasaki, Yamanashi 407-0192, Japan

• Kato Sadahiro

  Advanced Power Device Research Association, Yokohama 220-0073, Japan

• Ohsawa Yusuke

  Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan

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著作論文

• High-Quality SiO2 Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas
• High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
• High Quality SiO

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