Kato Sadahiro | Advanced Power Device Research Association, Yokohama 220-0073, Japan

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概要

関連著者

SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
Nomura Takehiko
Advanced Power Device Research Association, Yokohama 220-0073, Japan
Ueda Hirokazu
Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan
Sugawa Shigetoshi
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
Kambayashi Hiroshi
Advanced Power Device Research Association, Yokohama 220-0073, Japan
Kato Sadahiro
Advanced Power Device Research Association, Yokohama 220-0073, Japan

著作論文

High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate

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