SUGAWA Shigetoshi | New Industry Creation Hatchery Center, Tohoku University

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著作論文

Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors
High Quality SiO
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
Adhesion Characteristics of Magnetron-Sputter-Deposited Copper on Smooth Cycloolefin for Realizing Wiring with High-Frequency Signal Propagation
Noise Performance of Accumulation MOSFETs

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