Noise Performance of Accumulation MOSFETs
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概要
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The paper focuses on the analysis of the 1/f noise in accumulation and inversion mode p-MOSFETs and especially the impact of the doping concentration on the noise. The contribution of each conductive region is analyzed for both types of MOSFETs. It is revealed that the rise of the doping concentration reduces the noise coming from the front interface and let appear the contribution coming from the SOI layer. The result is a drastic reduction of the 1/f noise in favor of the accumulation mode p-MOSFET.
- 2012-10-18
著者
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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Gaubert Philippe
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University:Graduate School of Engineering, Tohoku University
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