High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
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概要
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High quality SiO2 gate insulator has been demonstrated for GaN metal--oxide--semiconductor (MOS) transistor which has high performance with normally-off operation. The SiO2 films formed on GaN by microwave-excited plasma enhanced chemical vapor deposition (MW-PECVD) and annealed after deposition exhibits a low-interface state density between SiO2 and GaN, a high-breakdown field, and a high charge-to-breakdown. The SiO2 films have been also applied to the gate insulator of AlGaN/GaN hybrid MOS heterojunction field-effect transistor (HFET) on Si substrate. The MOS-HFET show excellent properties with the threshold voltage of 4.2 V and the maximum field-effect mobility of 161 cm2 V-1 s-1.
- 2012-04-25
著者
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Nomura Takehiko
Advanced Power Device Research Association, Yokohama 220-0073, Japan
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Ueda Hirokazu
Tokyo Electron Technology Development Institute Inc., Amagasaki, Hyogo 660-0891, Japan
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Sugawa Shigetoshi
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Kambayashi Hiroshi
Advanced Power Device Research Association, Yokohama 220-0073, Japan
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Kato Sadahiro
Advanced Power Device Research Association, Yokohama 220-0073, Japan
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