Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
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概要
- 論文の詳細を見る
The angle-resolved Si 2p photoelectron spectra arising from a interfacial transition layer formed on a Si(100) were measured with a probing depth of nearly 2 nm. The novel analytical procedure of these spectra was developed by considering that one SiO<inf>2</inf>monolayer, two compositional transition layers (CTLs), and one Si monolayer constituting the Si substrate surface are continuously connected with each other to maintain the areal density of Si atoms. It was found for thermally grown transition layers that two CTLs are formed on the oxide side of the CTL/Si interface and the chemical structures correlated with the residual stress appear on the Si substrate side of the interface. The effects of oxidation temperature in the range from 900 to 1050 °C, annealing in the forming gas, and oxidation using oxygen radicals on the chemical structures of transition layers formed on both sides of the interface were also clarified.
- 2013-03-25
著者
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Muro Takayuki
Japan Synchrotron Radiation Res. Inst. Hyogo Jpn
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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KUMAGAI Yuki
Graduate School of Engineering Tohoku University
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Suwa Tomoyuki
New Industry Creation Hatchery Center Tohoku University
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Abe Kenichi
Graduate School Of Engineering Tohoku University
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Kinoshita Toyohiko
Japan Synchrotron Radiation Res. Inst./spring‐8 Hyogo Jpn
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Nakao Yukihisa
Graduate School of Engineering, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Nohira Hiroshi
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Li Xiang
Graduate School of Engineering, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Li Xiang
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Sugawa Shigetoshi
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Yamamoto Masashi
Stella Chemifa Corporation, Sakai 590-0982, Japan
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Muro Takayuki
Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
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Kinoshita Toyohiko
Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
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Abe Kenichi
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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