Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• SUGAWA Shigetoshi

  New Industry Creation Hatchery Center, Tohoku University

• Gaubert Philippe

  New Industry Creation Hatchery Center Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

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