Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma

スポンサーリンク

概要

• 論文の詳細を見る
• 2005-09-13

著者

• TERAMOTO Akinobu

  New Industry Creation Hatchery Center, Tohoku University

• SUGAWA Shigetoshi

  Graduate School of Engineering, Tohoku University

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• Sugawa S

  Graduate School Of Engineering Tohoku University

• SUGAWA Sigetoshi

  Tohoku University

• ISOGAI Tatsunori

  Graduate School of Engineering, Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• TAKAHASHI Ichirou

  New Industry Creation Hatchery Center, Tohoku University

• SAKURAI Hiroyuki

  New Industry Creation Hatchery Center, Tohoku University

• Sakurai Hiroyuki

  New Industry Creation Hatchery Center Tohoku University

• Takahashi Ichirou

  Graduate School Of Engineering Tohoku University

• Shimada Hiroyuki

  New Industry Creation Hatchery Center Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center Tohoku Univ.

• Isogai Tatsunori

  Graduate School Of Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

関連論文

• High current drivability FD-SOI CMOS with low Source/Drain series resistance (Silicon devices and materials)
• Low frequency noise in Si(100) and Si(110) p-channel MOSFETs (シリコン材料・デバイス)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• Subvector-Based Fast Encoding Method for Vector Quantization Without Using Two Partial Variances
• Performance Comparison between Equal-Average Equal-Variance Equal-Norm Nearest Neighbor Search (EEENNS) Method and Improved Equal-Average Equal-Variance Nearest Neighbor Search (IEENNS) Method for Fast Encoding of Vector Quantization(Image Processing and
• Fast Encoding Method for Image Vector Quantization Based on Multiple Appropriate Features to Estimate Euclidean Distance
• A Fast Encoding Method for Vector Quantization Using Modified Memory-Efficient Sum Pyramid
• A Fast Search Method for Vector Quantization Using Enhanced Sum Pyramid Data Structure(Image)
• An Improved Fast Encoding Algorithm for Vector Quantization Using 2-Pixel-Merging Sum Pyramid and Manhattan-Distance-First Check(Image Processing, Image Pattern Recognition)
• A Fast Encoding Method for Vector Quantization Using L_1 and L_2 Norms to Narrow Necessary Search Scope(Image Processing, Image Pattern Recognition)
• A Fast Encoding Method for Vector Quantization Based on 2-Pixel-Merging Sum Pyramid Data Structure(Image)
• A nonlinear cepstral compensation method for noisy speech processing (音声言語情報処理 研究報告 第1回音声言語シンポジウム(SPLC))
• Extracting person's speech individually from original records of meeting by speaker identification technique
• Control of nitrogen profile in radical nitridation of SiO_2 films
• Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
• Fully-Parallel VLSI Implementation of Vector Quantization Processor Using Neuron-MOS Technology (Special Issue on Integrated Electronics and New System Paradigms)
• Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
• The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
• The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
• Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
• Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
• Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
• Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
• Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
• Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
• High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
• Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
• Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
• A Fine-Grained Programmable Logic Module with Small Amount of Configuration Data for Dynamically Reconfigurable Field-Programmable Gate Array
• High Sensitivity Dynamic Range Enhanced CMOS Imager with Noise Suppression
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
• A Technology for Reducing Flicker Noise for ULSI Applications
• High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
• Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
• Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
• Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
• Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
• Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
• Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
• PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing
• Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
• Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
• Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Interconnect and Substrate Structure for Gigascale Integration
• Interconnect and Substrate Structure for High Speed Giga-Scale Integration
• Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
• Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
• Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
• High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
• A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
• A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
• Ferroelectric Sr_2(Ta_, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
• Manufacturing Process of Flat Display(Micro Mechanical Engineering)
• Sonoluminescence measurement of 1MHz ultrasonic cavitation and effect of dissolved gases
• Ultra-Shallow and Low-Leakage p^+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
• A Dynamically Reconfigurable Processor with Multi-Mode Operation Based on Newly Developed Full-Adder/D-Flip-Flop Merged Module (FDMM)
• Impurity Measurement in Specialty Gases Using an Atmospheric Pressure Ionizaiton Mass Spectrometer with a Two-Compartment Ion Source
• Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source
• Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects (Special issue: Advanced metallization for ULSI applications)
• Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
• A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
• A New Two-Step Round Oxidation STI Technology for Highly Reliable Flash Memory
• Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
• MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
• A Low-Dielectric-Constant Sr_2(Ta_, Nb_x)_2O_7 Thin Film Controlling the Crystal Orientation on an IrO_2 Substrate for One-Transistor-Type Ferroelectric Memory Device
• Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
• A 100 MHz 7.84 mm^2 31.7 msec 439 mW 512-Point 2-Dimensional FFT Single-Chip Processor(Low-Power System LSI, IP and Related Technologies)
• Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
• Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process
• Eliminating Needless Calculations on Circuit Level : Most-Significant-Digit-First Digit-Serial Processing
• Fast Computational Architectures to Decrease Redundant Calculations : Eliminating Redundant Digit Calculation and Excluding Useless Data (Special Issue on Integrated Electronics and New System Paradigms)
• A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor
• The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
• The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films
• Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
• A New Statistical Evaluation Method for the Variation of MOSFETs
• Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
• Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
• Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
• Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
• A Comparative Examination of Polyoxide Films Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted (400℃) Oxidation Techniques
• Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
• Large-scale test circuits for high-speed and highly accurate evaluation of variability and noise in metal-oxide-semiconductor field-effect transistor electrical characteristics
• Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency
• Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

もっと見る 閉じる

スポンサーリンク