TAKAHASHI Ichirou | New Industry Creation Hatchery Center, Tohoku University
スポンサーリンク
概要
関連著者
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TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
著作論文
- Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
- MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
- A Low-Dielectric-Constant Sr_2(Ta_, Nb_x)_2O_7 Thin Film Controlling the Crystal Orientation on an IrO_2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
- Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
- A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
- Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device
- Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
- Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor