Sakurai Hiroyuki | New Industry Creation Hatchery Center Tohoku University
スポンサーリンク
概要
関連著者
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
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Sakurai Hiroyuki
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Isogai Tatsunori
Graduate School Of Engineering Tohoku University
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
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ISOGAI Tatsunori
Graduate School of Engineering, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center Tohoku University
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SAKURAI Hiroyuki
New Industry Creation Hatchery Center, Tohoku University
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Takahashi Ichirou
Graduate School Of Engineering Tohoku University
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Shimada Hiroyuki
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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SUGAWA Shigetoshi
Graduate School of Engineering, Tohoku University
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Sugawa S
Graduate School Of Engineering Tohoku University
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Hirayama Masaki
Toshiba Corporation
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FUNAIWA Kiyoshi
New Industry Creation Hatchery Center, Tohoku University
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ISOGAI Tatsunori
New Industry Creation Hatchery Center, Tohoku University
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TSUNODA Tomoya
New Industry Creation Hatchery Center, Tohoku University
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YAMADA Atsuhiko
Graduate School of Engineering, Tohoku University
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Tsunoda Tomoya
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Takahashi Ichirou
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Yamada Atsuhiko
Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Goto Tetsuya
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Isogai Tatsunori
Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Sakurai Hiroyuki
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Sakurai Hiroyuki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
著作論文
- Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
- MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
- A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation