Hirayama Masaki | New Industry Creation Hatchery Center Tohoku University

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概要

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著作論文

The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma
Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization
Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced Metal Organic Chemical Vapor Deposition
A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
A Technology for Reducing Flicker Noise for ULSI Applications
Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma
Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device
Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process
High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

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