Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process
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概要
- 論文の詳細を見る
Low temperature (300 °C) deposition of thin microcrystalline/amorphous silicon films by using newly developed single shower, dual injection, microwave excited high density plasma ($10^{11}$ cm-3) system is described. This is an original setup based on an experimental modification of a dual shower system that was reported by us earlier. For the first time, for this system, experimental results are presented correlating between the deposition and plasma parameters with the resulting Si films atomic structure. The results consistent interdependence enables to pre-determine, in a wide range, by design, the growth of microcrystalline or amorphous thin Si films, by setting the proper deposition conditions for each film type.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
-
Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Takeda Toru
New Industry Creation Hatchery Center Tohoku University
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TANAKA Kouji
New Industry Creation Hatchery Center, Tohoku University
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Tsumori Toshirou
New Industry Creation Hatchery Center Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Inoue Hirotada
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Takeda Toru
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Aharoni Herzl
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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