Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
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概要
- 論文の詳細を見る
Sr2(Ta1-x,Nbx)2O7 (STN, $x=0.3$) is suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because it has a low dielectric constant and a high heat resistance. A new technology that enables the control of the orientation and properties (with a low dielectric constant and a large coercive field) of the STN film formed on an IrO2 film has been developed. We have successfully fabricated perovskite STN films with (110) and (172) orientations by controlling the crystal orientation of IrO2. An metal–ferroelectric–metal–insulator–Si (MFMIS) structure device with a large memory window of 2.5 V under 5 V writing operation has successfully been fabricated. Furthermore, the operation of the MFMIS FET, whose floating gate is IrO2 only, has been achieved for the first time.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-30
著者
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
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Azumi Keita
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Azumi Keita
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Takahashi Ichirou
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Sugawa Shigetoshi
Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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