Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
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概要
- 論文の詳細を見る
Sr2(Ta1-x,Nbx)2O7 (STN; $x = 0.3$) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal–ferroelectric–insulator–semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal–organic chemical vapor deposition (MOCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200 nm)/SiO2 (10 nm)/p-type Si device shows capacitance–voltage ($C$–$V$) hysteresis curves and a memory window of 1.2 V with a 5 V writing operation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center Tohoku University
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TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
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Shirai Yasuyuki
New Industry Creation Hatchery Center (niche) Tohoku University
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Yamashita Satoru
New Industry Creation Hatchery Center Tohoku University
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Azumi Keita
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Azumi Keita
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Yamashita Satoru
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Shirai Yasuyuki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Sugawa Shigetoshi
Graduate School of Engineering, Tohoku University, 6-6-11 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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