Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
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概要
- 論文の詳細を見る
The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (${>}10^{12}$ cm-3) low electron temperature (${<}1$ eV) Kr/O2 plasma.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
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Sugawa Shigetoshi
Management Of Science & Technology Department School Of Engineering Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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TAKAHASHI Ichirou
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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SAKURAI Hiroyuki
Specialty Products Division, UBE INDUSTRIES, LTD.
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Hirai Kentaro
New Industry Creation Hatchery Center Tohoku University
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Yamada Atsuhiko
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center Tohoku University
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Urabe Shinichi
New Industry Creation Hatchery Center Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Hirayama Masaki
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Urabe Shinichi
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Yamada Atsuhiko
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Hirai Kentaro
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Goto Tetsuya
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Sakurai Hiroyuki
Specialty Products Division, UBE INDUSTRIES, LTD, 1978-10, Kogushi, Ube, Yamaguchi 755-8633, Japan
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