Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory

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概要

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• Nitrogen profile variations were systematically studied for the plasma nitridation process of the dynamic random access memory (DRAM) gate dielectrics, using angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and their influences to the boron blocking and the device performances including negative bias temperature instability (NBTI) were investigated. Nitrogen atoms incorporated are localized in the surface vicinity within 1.5 nm of the thickness and at the peak positions around 0.5 nm. The high pressure and high temperature conditions of plasma nitridation are preferred for improving the NBTI and the tool productivity. Post nitridation anneal stabilizes the nitrogen atoms incorporated, and improves the immunity against the boron penetration into the gate dielectrics. Both of re-oxidation and the out-diffusion of nitrogen atoms take place simultaneously near the surface during the queue time after the plasma nitridation. Microwave plasma with the radial line slot antenna (RLSA) is a successful SiON gate insulator formation technology in the manufacturing of DRAM as well as logic devices.

• 2008-07-25

著者

• TAKEUCHI Masashi

  Tokyo Electron AT Ltd.

• HONDA Minoru

  Tokyo Electron AT Ltd.

• ISHIZUKA Shu-ichi

  Tokyo Electron AT Ltd.

• HIROTA Yoshihiro

  Tokyo Electron AT Ltd.

• Sugawa Shigetoshi

  Management Of Science & Technology Department School Of Engineering Tohoku University

• Nakanishi Toshio

  Tokyo Electron At Ltd. Hyogo Jpn

• Akasaka Yasushi

  Tokyo Electron Ltd.

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Tanaka Yoshitsugu

  Tokyo Electron Ltd.

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Akasaka Yasushi

  Tokyo Electron Ltd., Akasaka Bitz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-8481, Japan

• Hirota Yoshihiro

  Tokyo Electron AT Ltd., SPA Development and Engineering, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan

• Sugawara Takuya

  Tokyo Electron AT Ltd., Technology Development Center, 650, Hosaka-cho Mitsuzawa, Nirasaki, Yamanashi 407-0192, Japan

• Tanaka Yoshitsugu

  Tokyo Electron Ltd., Akasaka Bitz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-8481, Japan

• Murakawa Shigemi

  Management of Science and Technology, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Sugawa Shigetoshi

  Management of Science and Technology, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Takeuchi Masashi

  Tokyo Electron AT Ltd., SPA Development and Engineering, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan

• Nakanishi Toshio

  Tokyo Electron AT Ltd., SPA Development and Engineering, 1-8 fuso-cho, Amagasaki, Hyogo 660-0891, Japan

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