High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate

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概要

• 論文の詳細を見る

• High mobility metal–oxide–semiconductor field-effect transistors (MOSFETs) are demonstrated on strained or relaxed SiGe-on-Si heterostructures with Si cap/SiGe channel quantum well structures. Si cap processing is frequently used to enhance hole mobility of SiGe pMOSFETs by improving the interface quality of high-$k$ gate dielectrics and SiGe channels. However, one of mechanisms that limits future gate oxide scaling is Ge enhanced Si oxidation, which results in a thick Si oxide interface layer. In this work, without using Si cap process, we have fabricated high mobility SiGe channel pMOSFETs after optimizing epitaxial SiGe-on-Si and high-$k$ dielectric/metal gate process. High mobility with low off-state current have been achieved and correlated with epitaxial SiGe-on-Si processes.

• 2009-04-25

著者

• Kang Chang

  Sematech

• Jammy Raj

  Sematech

• SUGAWARA Takuya

  Tokyo Electron Ltd.

• Majhi Prashant

  Sematech

• Akasaka Yasushi

  Tokyo Electron Ltd.

• OH Jungwoo

  SEMATECH

• Kang Chang

  SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

• Joe Raymond

  Tokyo Electron America Inc., 2400 Grove Blvd., Austin, TX 78741, U.S.A.

• Kaitsuka Takanobu

  Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan

• Arikado Tsunetoshi

  Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan

• Tomoyasu Masayuki

  Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan

• Akasaka Yasushi

  Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan

• Sugawara Takuya

  Tokyo Electron AT Ltd., Technology Development Center, 650, Hosaka-cho Mitsuzawa, Nirasaki, Yamanashi 407-0192, Japan

• Oh Jungwoo

  SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.

関連論文

• Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
• Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
• High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
• Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory
• High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
• Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

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