High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

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概要

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• We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. Surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS further enhance transistor performances. On a (110) surface, the hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. We finally address low drive current issue of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (ρc).

• 2011-05-01

著者

• Jammy Raj

  Sematech

• Lee Se-hoon

  University Of Texas At Austin

• OH Jungwoo

  SEMATECH

• LEE Hideok

  University of Texas at Austin

• Lee Se-hoon

  Sematech

• Huang Jeff

  Sematech

• OK Injo

  SEMATECH

• KIRSCH Paul

  SEMATECH

• LEE Hi-Deok

  Chungnam National University

関連論文

• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
• High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
• Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
• High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
• Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
• Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks

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