Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
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概要
- 論文の詳細を見る
Electrical characteristics of metal–oxide–semiconductor (MOS) capacitors and transistors fabricated on Ge epitaxial layers exhibit a strong dependence on layer structures, such as the Ge epitaxial layer thickness, Si cap layer, and Ge channel doping. The dependence in Ge-on-Si devices is associated with different material parameters of epitaxial Ge layers and Si substrates, such as bandgap energy ($E_{\text{g}}$), intrinsic carrier concentration ($n_{\text{i}}$), and permittivity ($\varepsilon$). The flat band voltages of capacitors are independent of the thickness of epi-Ge layer grown on Si substrates. The threshold voltages, however, exhibit strong dependency on layer structures. Non-ideal capacitance–voltage characteristics, such as low frequency behavior and frequency dispersion, are also determined by combined effects of Ge-on-Si heterostructures.
- 2008-04-25
著者
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Jammy Raj
Sematech
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Tseng Hsing-huang
Sematech
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Harris Rusty
Sematech
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Majhi Prashant
Sematech
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Banerjee Sanjay
University Of Texas At Austin
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OH Jungwoo
SEMATECH
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Jammy Raj
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Lee Hi-Deok
University of Texas at Austin, 10100 Burnet Road, Austin, TX 78758, U.S.A.
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Majhi Prashant
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Tseng Hsing-Huang
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Banerjee Sanjay
University of Texas at Austin, 10100 Burnet Road, Austin, TX 78758, U.S.A.
関連論文
- Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
- High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
- Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
- Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
- Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))
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