Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks
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概要
- 論文の詳細を見る
Negative bias temperature instability (NBTI) of the HfSiON/TiN gate stack is investigated as a function of the dielectric thickness. It is shown that as the thickness of the HfSiON layer is reduced below 20 Å, the NBTI mechanism approaches the mechanism that induces H-reaction diffusion. Conversely, for thicker HfSiON dielectrics, a combination of H-reaction–diffusion and charge detrapping from the bulk HfSiON contribute to NBTI. MOS devives with plasma nitrided HfSiON (30 Å) with varying nitrogen (N) content as gate dielectric are studied with respect to NBTI and it is found that NBTI is dominated by electron detrapping from the bulk and the threshold voltage ($V_{\text{TH}}$) shift reduces monotonically with increasing N content.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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CHOI Rino
SEMATECH
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BERSUKER Gennadi
SEMATECH
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KRISHNAN Siddarth
SEMATECH
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Lee Jack
The University Of Texas At Austin Department Of Electrical And Computer Engineering
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Lee Byoung
Sematech
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Harris Rusty
Sematech
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KIRSCH Paul
SEMATECH
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Harris Rusty
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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Quevedo Manuel
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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Krishnan Siddarth
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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Kirsch Paul
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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Lee Byoung
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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Bersuker Gennadi
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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Choi Rino
SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.
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