Enhancement Mode GaAs n-MOSFET with High-k Dielectric
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Zhu Feng
The University Of Texas At Austin Department Of Electrical And Computer Engineering
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Lee Jack
The University Of Texas At Austin Department Of Electrical And Computer Engineering
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YAKIMOV Michael
University of Albany - SUNY, College of Nanoscale Science and Engineering
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TOKRANOV Vadim
University of Albany - SUNY, College of Nanoscale Science and Engineering
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KAMBHAMPATI Rama
University of Albany - SUNY, College of Nanoscale Science and Engineering
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KOVESHNIKOV Sergei
Intel corp.
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TSAI Wilman
Intel corp.
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OKTYABRSKY Serge
University of Albany - SUNY, College of Nanoscale Science and Engineering
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Tokranov Vadim
University Of Albany - Suny College Of Nanoscale Science And Engineering
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Yakimov Michael
University Of Albany - Suny College Of Nanoscale Science And Engineering
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Kambhampati Rama
University Of Albany - Suny College Of Nanoscale Science And Engineering
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Oktyabrsky Serge
University Of Albany - Suny College Of Nanoscale Science And Engineering
関連論文
- Enhancement Mode GaAs n-MOSFET with High-k Dielectric
- Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks