Lee Jack | The University Of Texas At Austin Department Of Electrical And Computer Engineering

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概要

• LEE Jackの詳細を見る
• 同名の論文著者
• The University Of Texas At Austin Department Of Electrical And Computer Engineeringの論文著者

関連著者

• Lee Jack

  The University Of Texas At Austin Department Of Electrical And Computer Engineering

• Zhu Feng

  The University Of Texas At Austin Department Of Electrical And Computer Engineering

• CHOI Rino

  SEMATECH

• BERSUKER Gennadi

  SEMATECH

• KRISHNAN Siddarth

  SEMATECH

• Lee Byoung

  Sematech

• Harris Rusty

  Sematech

• YAKIMOV Michael

  University of Albany - SUNY, College of Nanoscale Science and Engineering

• TOKRANOV Vadim

  University of Albany - SUNY, College of Nanoscale Science and Engineering

• KAMBHAMPATI Rama

  University of Albany - SUNY, College of Nanoscale Science and Engineering

• KOVESHNIKOV Sergei

  Intel corp.

• TSAI Wilman

  Intel corp.

• OKTYABRSKY Serge

  University of Albany - SUNY, College of Nanoscale Science and Engineering

• Tokranov Vadim

  University Of Albany - Suny College Of Nanoscale Science And Engineering

• Yakimov Michael

  University Of Albany - Suny College Of Nanoscale Science And Engineering

• Kambhampati Rama

  University Of Albany - Suny College Of Nanoscale Science And Engineering

• Oktyabrsky Serge

  University Of Albany - Suny College Of Nanoscale Science And Engineering

• KIRSCH Paul

  SEMATECH

• Harris Rusty

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

• Quevedo Manuel

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

• Krishnan Siddarth

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

• Kirsch Paul

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

• Lee Byoung

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

• Bersuker Gennadi

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

• Choi Rino

  SEMATECH, 2706 Montopolis Dr, Austin, TX 78751, U.S.A.

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著作論文

• Enhancement Mode GaAs n-MOSFET with High-k Dielectric
• Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks

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