Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration

スポンサーリンク

概要

論文の詳細を見る
2006-09-13

著者

関連論文

Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
Transient charging and relaxation in high-k gate dielectrics and its implications
Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks
Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric

もっと見る

スポンサーリンク