NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Lee Byoung
Sematech Tx Usa
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Kirsch Paul
Ibm
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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YOUNG Chadwin
SEMATECH
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BERSUKER Gennadi
SEMATECH
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KRISHNAN Siddarth
SEMATECH
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QUEVEDO Manuel
TI
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HARRIS Rusty
AMD
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PETERSON Jeff
SEMATECH
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LI Hong-Jyh
Infineon
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LEE Jack
Electrical Engg. The University of Texas at Austin
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Lee Byoung
Ibm
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Young Chadwin
International Sematech (ismt)
関連論文
- Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
- Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
- Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
- NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Transient charging and relaxation in high-k gate dielectrics and its implications
- Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
- Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
- A novel inversion pulse measurement technique to investigate transient charging characteristics in high-k NMOS transistors
- Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
- Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
- Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
- Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric