LEE Byoung | IBM Assignee
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概要
関連著者
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LEE Byoung
IBM Assignee
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Lee Byoung
Sematech Tx Usa
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YOUNG Chadwin
SEMATECH
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Lee Byoung
Ibm
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Young Chadwin
International Sematech (ismt)
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CHOI Rino
SEMATECH
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BERSUKER Gennadi
SEMATECH
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Sim Jang
International Sematech
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YOUNG Chadwin
International SEMATECH
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CHOI Rino
International SEMATECH
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BERSUKER Gennadi
International SEMATECH
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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ZEITZOFF Peter
SEMATECH
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LEE Jack
Electrical Engg. The University of Texas at Austin
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Brown George
International Sematech (ismt)
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Kwong Dim-lee
Microelectronic Research Center The University Of Texas At Austin
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang Hyunsang
Gwangju Institute Of Science And Technology
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Kang Chang
Sematech
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Kirsch Paul
Ibm
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Quevedo-lopez Manuel
Texas Instruments Assignee
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HUSSAIN Muhammad
SEMATECH
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SONG Seung-Chul
SEMATECH
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ALSHAREEF Husam
Texas Instruments Assignee
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SASSMAN Barry
SEMATECH
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SIM Jang
SEMATECH
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ZEITZOFF Peter
International SEMATECH
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KRISHNAN Siddarth
SEMATECH
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QUEVEDO Manuel
TI
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HARRIS Rusty
AMD
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PETERSON Jeff
SEMATECH
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LI Hong-Jyh
Infineon
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CHANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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LEE Jack
Advanced Materials Research Center, The University of Texas at Austin
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Chang Man
Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Byoung
Sematech
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PARK Hokyung
Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Park Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Rino
SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, U.S.A.
著作論文
- Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
- NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Transient charging and relaxation in high-k gate dielectrics and its implications
- Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
- Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing