HWANG Hyunsang | Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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概要
- HWANG Hyunsangの詳細を見る
- 同名の論文著者
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technologyの論文著者
関連著者
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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YANG Hyundoek
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Yang Hyundoek
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Sangmoo
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology
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SIM Hyunjun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Sim Hyunjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Yang Dooyoung
Jusung Engineering Co.
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Yang D
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Yang D
Jusung Engineering Co.
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Hwang Hyunsang
Advanced Technology Laboratory., LG Semicon Co.,
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Sim H
Kwangju Inst. Sci. And Technol. Kwangju Kor
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Hwang Hyunsang
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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CHANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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JEON Sanghun
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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CHANG Hyo
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Im Kiju
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Jeon Sanghun
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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SON Yunik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
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Kwon Oh-kyong
Department Of Electrical Engineering Hanyang University
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LEE Young-Jong
Advanced Technology Laboratory., LG Semicon Co.
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JEONG Ju-Young
Department of Electrical Engineering The University of Suwon
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LEE Chang-Hyo
Department of Physics Hanyang University
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Lee sang-Gi
Dept. of Physics Hanyang Univ.
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Jeong Ju-Young
Dept. of Elec. Eng., The Univ. of Suwon.
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Kwon Oh-Kyong
Dept. of Elec. Eng., Hanyang Univ.
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Lee Chang-Hyo
Dept. of Physics Hanyang Univ.
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Kwon O‐k
Division Of Electrical And Computer Engineering Hanyang University
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Kwon Oh-keun
Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University
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Lee S‐g
Korea Univ. Chungnam Kor
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Heo Sungho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Taeho
Department Of Materials Science And Engineering Hanyang University
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Lee Y‐j
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Lee Dongkyu
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Ahn Jae-gyung
R&d Division Hyundai Microelectronics Co.
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Ahn Jae-gyung
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Lee Young-jong
Lg Semicon. Ltd.
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Lee Young-jong
Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Yang Hong
Microelectronics Centre School Of Electrical And Electronics Engineering Nanyang Technological Unive
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PARK Jihwan
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Park Jihwan
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Yang Huan
Process Development Laboratory Electronic Devices Division
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Lee Young-jong
Advanced Technology Laboratory. Lg Semicon Co.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Lee Taeho
Materials Science And Engineering Hanyang University
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Chang H
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Im Kiju
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Yang H
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Jung Heungsang
Dit Laboratory Daewoo Electronics Co. Ltd.
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Jeon S
Md Laboratory Samsung Advanced Institute Of Technology
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Son Yunik
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Yang Hyundoek
Samsung Advanced Inst. Technol (sait) Gyeonggi‐do Kor
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YEO In-Seok
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Yeo In-seok
Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor Inc.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor. Inc.
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Park Dae-gyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lee K
Korea Univ. Seoul Kor
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Rahman Md.
Department Of Precision Science & Technology And Applied Physics Osaka University
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Park In
Information Display Research Institute Hanyang University
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LEE Taeho
Department of Materials Science and Engineering, Hanyang University
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KO Han-Kyoung
Department of Materials Science and Engineering, Hanyang University
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AHN Jinho
Department of Materials Science and Engineering, Hanyang University
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PARK In-Sung
Information Display Research Institute, Hanyang University
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Song Young
Electrotechnical Laboratory:department Of Physics Seoul National University
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Park D‐g
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Lee Byoung
Sematech Tx Usa
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HUH Yun
R&D Division, LG Semicon. Co., Ltd.
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Ko Han
Department Of Materials Science And Engineering Hanyang University
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Hwang H
Kwangju Inst. Sci. And Technol. Kwangju Kor
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Yeom H.
Atomic-scale Surface Science Research Center Institute Of Physics&applied Physics Yonsei Univers
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Sim Hyunjun
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Shim Kyu-hwan
Electronics And Telecommunications Research Institute
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Ahn Jae-gyung
Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science Anti Engineering Kwangju Institute Of Science And Technology
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Huh Yun
R&d Division Lg Semicon Co.
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Park Kyung
Electronics And Telecommunications Research Institute
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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YOUNG Chadwin
SEMATECH
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Jeon S
Samsung Advanced Inst. Technol. Suwon Kor
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LEE Jack
Electrical Engg. The University of Texas at Austin
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Lee Jeong-youb
Semiconductor Research Div. Hyundai Electronics Industry
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Hwang H
Kwangju Inst. Sci. And Technol. Gwangju Kor
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Yang Dooyoung
Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd.
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LEE Jack
Advanced Materials Research Center, The University of Texas at Austin
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Lee Byoung
Ibm
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HWANG Hyunsang
ULSI Laboratory of LG Semicon Co. Ltd.
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Rahman Md.
Department Of Agriculture Bsmrau
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SAMANTARAY Chandan
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology #1
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YEOM Hanwoong
Institute of Physics and Applied Physics, Yonsei University
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Yang Dooyoung
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Yang Dooyoung
Ulsi Laboratory Lg Semicon Co. Ltd.
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Yeom Hanwoong
Institute Of Physics And Applied Physics Yonsei University
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Chang Hyo
Department Of Materials Science Anti Engineering Kwangju Institute Of Science And Technology
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Moon Dae
Nano Surface Group Korea Research Institute Of Standards And Science
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Lim Jung-wook
Electronics And Telecommunications Research Institute
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Chang Man
Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology (gist)
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Jung Ranju
Analytical Engineering (ae) Center Samsung Advanced Institute Of Technology (sait)
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Jeon Sanghun
Dept. Of Materials Sci. & Eng. Kwangju Institute Of Science And Technology
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Lee Seongjae
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Yang Hyundoek
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Yang Hyundoek
Semiconductor Device And Material Lab. Samsung Advanced Institute Of Technology (sait)
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Young Chadwin
International Sematech (ismt)
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Baek Sungkweon
Samsung Electronics Co. Ltd.
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Yang H.
Department of Physics, Center for Nano Science and Nano Technology, National Sun Yat-sen University
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Kim Juhyung
Md Laboratory Samsung Advanced Institute Of Technology
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BUH Gyongho
Samsung Electronics Co., Ltd.
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SHIN Yugyun
Samsung Electronics Co., Ltd.
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Buh Gyongho
Samsung Electronics Co. Ltd.
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Shin Yugyun
Samsung Electronics Co. Ltd.
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PARK Hokyung
Gwangju Institute of Science and Technology
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CHOI Hyejung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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JEON S.
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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CHANG H.
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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PARK D.
Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.
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LIM K.
Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.
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KOH H.
Atomic-scale Surface Science Research Center, Institute of Physics&Applied Physics, Yonsei Universit
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CHOI Cheljong
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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JANG Moongyu
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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KIM Yarkyeon
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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JUN Myungsim
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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KIM Taeyoub
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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PARK Byoungchul
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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Choi Sangmoo
Department Of Materials Science Anti Engineering Kwangju Institute Of Science And Technology
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JUNG Hyungsuk
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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JUNG Hyungsuk
Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology
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IM Kiju
Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology
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HWANG Hyunsang
Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology
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YOUN Kang-Sik
ULSI Laboratory, LG Semicon Co.
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LEE Dong
Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd.
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LEE Woohyung
Department of Materials Science and Engineering, Kwangju Institute of science and Technology
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SHIN Jeshik
Department of Materials Science and Engineering, Kwangju Institute of science and Technology
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KIM Hyojune
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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KWON Hyungshin
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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YEO Inseok
Hyundai Electronics Industry Co.
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CHANG Hyosik
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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LEE Kilho
Semiconductor Research Div., Hyundai Electronics Industry
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SEONG Dong-jun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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LEE Dongsoo
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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OH Seokjoon
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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PYUN Myungbeom
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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LEE Byounghun
International SEMATECH, IBM Assignee
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GARDNER Mark
International SEMATECH, AMD assignee
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PARK Hokyong
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Youn Kang-sik
Ulsi Laboratory Lg Semicon Co.
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Kim Hyojune
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Kim Chungwoo
Md Laboratory Samsung Advanced Institute Of Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology (gist)
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Hwang Hyunsang
Ulsi Laboratory Lg Semicon Co.
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JANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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JEON Sanghun
MD laboratory, Samsung Advanced Institute of Technology
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Jang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Gardner Mark
International Sematech Amd Assignee
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Chang Hyosik
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Kim Taeyoub
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Park Hokyong
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Jang Moongyu
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Jun Myungsim
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Kim Yarkyeon
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Choi Cheljong
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Lee Byounghun
International Sematech Ibm Assignee
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Park Byoungchul
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Lee Dongsoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Woohyung
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Pyun Myungbeom
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Kwon Hyungshin
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Oh Seokjoon
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Shin Jeshik
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Yang H.
Department Of Physics Center For Nano Science And Nano Technology National Sun Yat-sen University
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Seong Dong-jun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Song Young
Electronics And Telecommunications Research Institute
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Yang H.
Department Of Chemical Engineering Sogang University
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Rahman Md.
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dong
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Jeon S.
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Kim Yarkyueon
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI)
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PARK D.
Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.
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YANG Dooyoung
Jusung Engineering
著作論文
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability
- Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance-Voltage Analysis
- Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Senliconductor Device : Semiconductors
- Improved Reliability Characteristics of Ultrathin SiO_2 Grown by Low Temperature Ozone Oxidation
- Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application
- Electrical Characteristics of TiO_2/ZrSi_xO_y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications : Semiconductors
- Electrical Characteristics of ZrO_2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications
- Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO_2 Film
- Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing
- High Quality Ultrathin TaO_xN_y Gate Dielectric Prepared by Nitridation of Ta_2O_5
- Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
- Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's
- Extracting the Oxide Capacitance Using Inductance -Capacitance-Resistance Meter Measurement on Metal-Oxide-Semiconductor Capacitors : Semiconductors
- Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D_2O
- Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D_2O
- Electrical Characteristics of Ozone-Oxidized HfO_2 Gate Dielectrics
- Ultrashallow p^+/n Junction Formation by 0.5-1 keV Ion Implantation
- Elucidation of ReRAM Mechanism and Improvement of Memory Characteristics by HPHA
- Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics
- Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen Annealing
- High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices