Chang Man | Gwangju Institute Of Science And Technology
スポンサーリンク
概要
関連著者
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang Hyunsang
Gwangju Institute Of Science And Technology
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Chang Man
Gwangju Institute Of Science And Technology
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PARK Hokyung
Gwangju Institute of Science and Technology
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Lee Byoung
Sematech Tx Usa
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Lee Jong-ho
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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YOUNG Chadwin
SEMATECH
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LEE Jack
Electrical Engg. The University of Texas at Austin
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CHANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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LEE Jack
Advanced Materials Research Center, The University of Texas at Austin
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Lee Byoung
Ibm
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Young Chadwin
International Sematech (ismt)
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JO Minseok
Gwangju Institute of Science and Technology
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JUNG Hyung-Suk
Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd.
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Jung Hyung-suk
Advanced Process Development Team System Lsi Division Samsung Electronics Company Ltd.
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
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Lee Jong-ho
Advanced Process Development Team System Lsi Division Samsung Electronics Company Ltd.
著作論文
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET