Chang Man | Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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概要
- CHANG Manの詳細を見る
- 同名の論文著者
- Department Of Materials Science And Engineering Gwangju Institute Of Science And Technologyの論文著者
関連著者
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Rahman Md.
Department Of Precision Science & Technology And Applied Physics Osaka University
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Lee Byoung
Sematech Tx Usa
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang Hyunsang
Gwangju Institute Of Science And Technology
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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YOUNG Chadwin
SEMATECH
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LEE Jack
Electrical Engg. The University of Texas at Austin
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LEE Jack
Advanced Materials Research Center, The University of Texas at Austin
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Lee Byoung
Ibm
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Rahman Md.
Department Of Agriculture Bsmrau
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Im Kiju
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Im Kiju
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Chang Man
Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology (gist)
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Jung Ranju
Analytical Engineering (ae) Center Samsung Advanced Institute Of Technology (sait)
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Lee Seongjae
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Yang Hyundoek
Semiconductor Device And Material Lab. Samsung Advanced Institute Of Technology (sait)
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Young Chadwin
International Sematech (ismt)
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PARK Hokyung
Gwangju Institute of Science and Technology
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SON Yunik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Son Yunik
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Cheljong
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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JANG Moongyu
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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KIM Yarkyeon
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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JUN Myungsim
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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KIM Taeyoub
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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PARK Byoungchul
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (
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PARK Hokyong
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology (gist)
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Kim Taeyoub
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Park Hokyong
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Jang Moongyu
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Jun Myungsim
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Kim Yarkyeon
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Choi Cheljong
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Park Byoungchul
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Lee Byoung
Department Of Ceramic Engineering Yonsei University
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Rahman Md.
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Ju Yongkyu
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Jung Seungiae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee JoonMyoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Yoon Jaesik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Yoon Jaesik
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Jung Seungjae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee Byoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Choi Rino
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Chang Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Kim Yarkyueon
IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI)
著作論文
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO_2 Film
- Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen Annealing
- Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal–Alumina–Nitride–Oxide–Silicon-Type Flash Memory Devices
- Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
- Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing