Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
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概要
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The device performance and reliability degradation of an n-type metal–oxide–semiconductor field-effect transistor (nMOSFET) that depend on the composition of a tantalum–silicon–nitride (TaSiN) electrode were investigated. Compared with a binary tantalum–nitride (TaN) gate electrode, nMOSFETs with ternary TaSiN electrodes showed the degradations of electron mobility and interface reliability. In addition, the electron mobility and interface reliability were significantly degraded by increasing the tantalum and silicon content in the TaSiN electrodes. By single pulsed drain current (pulsed $I_{\text{d}}$–$V_{\text{g}}$) and charge pumping measurements, significantly increased number of charge trapping sites and interface traps were observed in nMOSFETs with ternary TaSiN electrodes. The degraded electrical properties of hafnium oxide (HfO2) can be explained by the TaSiN gate electrode/dielectric interaction during the high-temperature process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Byoung
Department Of Ceramic Engineering Yonsei University
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Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee Byoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Choi Rino
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea
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Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Chang Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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