Electrical Characteristics of Metal–Oxide–Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO2
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概要
- 論文の詳細を見る
The electrical characteristics of metal–oxide–semiconductor (MOS) device with Sc gate on atomic-layer-deposited (ALD) HfO2 were evaluated, for the first time. The equivalent oxide thickness (EOT) was reduced after post-metallization annealing even at 200°C. The reduction of EOT may be attributed to the diffusion of oxygen from the interfacial layer between HfO2 and Si substrate to the Sc gate. In case of optimum annealing condition, Sc gate can reduce EOT without degradation of leakage current and interfacial quality. The estimated effective work function of Sc was ${\sim}3.8$ eV and Sc might be a candidate for the gate electrode of n-type MOS devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-09-10
著者
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Yang Hyundoek
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dongsoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Yang Hyundoek
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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