Park Hokyung | Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
スポンサーリンク
概要
- PARK Hokyungの詳細を見る
- 同名の論文著者
- Department Of Materials Science And Engineering Gwangju Institute Of Science And Technologyの論文著者
関連著者
-
Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
Chang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
CHOI Rino
SEMATECH
-
LEE Byoung
IBM Assignee
-
Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
KO Han-Kyoung
Department of Materials Science and Engineering, Hanyang University
-
PARK In-Sung
Information Display Research Institute, Hanyang University
-
Lee Byoung
Sematech Tx Usa
-
Ahn Jinho
Department Of Materials Engineering Graduate School Of Advanced Materials And Chemical Engineering H
-
Sim Hyunjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
-
Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
-
Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
-
Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
-
Hwang Hyunsang
Gwangju Institute Of Science And Technology
-
YOUNG Chadwin
SEMATECH
-
BERSUKER Gennadi
SEMATECH
-
LEE Jack
Electrical Engg. The University of Texas at Austin
-
CHANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
LEE Jack
Advanced Materials Research Center, The University of Texas at Austin
-
Lee Byoung
Ibm
-
Chang Man
Gwangju Institute Of Science And Technology
-
Lee Byoung
Sematech
-
Yang Hyundoek
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Young Chadwin
International Sematech (ismt)
-
CHOI Sangmoo
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology
-
Jeon S
Md Laboratory Samsung Advanced Institute Of Technology
-
Kim Juhyung
Md Laboratory Samsung Advanced Institute Of Technology
-
PARK Hokyung
Gwangju Institute of Science and Technology
-
Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
LEE Byounghun
International SEMATECH, IBM Assignee
-
GARDNER Mark
International SEMATECH, AMD assignee
-
Kim Chungwoo
Md Laboratory Samsung Advanced Institute Of Technology
-
JANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
-
JEON Sanghun
MD laboratory, Samsung Advanced Institute of Technology
-
Jang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Gardner Mark
International Sematech Amd Assignee
-
Lee Byounghun
International Sematech Ibm Assignee
-
Lee Dongsoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
-
Lee Byoung
Department Of Ceramic Engineering Yonsei University
-
Lee Taeho
Department Of Civil And Environmental Engineering Pusan National University
-
Park In-Sung
Information Display Research Institute, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Choi Rino
Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
-
Ko Han-Kyoung
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Lee Byoung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
-
Choi Rino
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea
-
Ahn Jinho
Department of Material Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
-
Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong, Puk-gu, Gwangju 500-712, Korea
-
Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
Lee Taeho
Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
-
Choi Sangmoo
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
Jo Minseok
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
-
Chang Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
-
Park Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
Choi Rino
Inha University, Incheon 402-751, Korea
-
Choi Rino
SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, U.S.A.
-
Yang Hyundoek
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
-
AHN Jinho
Department of Computer Science, Kyonggi University
著作論文
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics
- High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
- Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
- Electrical Properties of Atomic Layer Deposited HfO2 Gate Dielectric Film Using D2O as Oxidant for Improved Reliability
- Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
- Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
- Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing
- Electrical Characteristics of Metal–Oxide–Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO2