High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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PARK Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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CHOI Sangmoo
Department of Materials Science anti Engineering, Kwangju Institute of Science and Technology
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Jeon S
Md Laboratory Samsung Advanced Institute Of Technology
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Kim Juhyung
Md Laboratory Samsung Advanced Institute Of Technology
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Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Kim Chungwoo
Md Laboratory Samsung Advanced Institute Of Technology
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JANG Man
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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JEON Sanghun
MD laboratory, Samsung Advanced Institute of Technology
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Jang Man
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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