Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's
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概要
- 論文の詳細を見る
- 1995-11-30
著者
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Hwang Hyunsang
Advanced Technology Laboratory., LG Semicon Co.,
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Ahn Jae-gyung
R&d Division Hyundai Microelectronics Co.
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Ahn Jae-gyung
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang H
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang H
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Hwang Hyunsang
Advanced Technology Laboratory. Lg Semicon Co.
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Hwang Hyunsang
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Yang Dooyoung
Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd.
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Yang Dooyoung
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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Yang Dooyoung
Jusung Engineering Co.
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Yang D
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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LEE Dong
Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd.
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Yang D
Jusung Engineering Co.
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Lee Dong
Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.
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