Impact of Nitrogen Implantation in Lightly Doped Drain(NIL)on Deep Sub-Micron CMOS Devices

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Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
Shallow Trench Isolation Characteristics with High-Density-Plasma Chemical Vapor Deposition Gap-Fill Oxide for Deep-Submicron CMOS Technologies
Integrated Twin-Guide Corner Reflector Lasers with Surface-Grating-Etching for Simple Mode Selectivity
TaO_xN_y Gate Dielectric with Improved Thermal Stability
ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis
Impact of Nitrogen Implantation in Lightly Doped Drain(NIL)on Deep Sub-Micron CMOS Devices
The Impact of Nitrogen Implantation at LDD(NIL) on Deep Sub-Micron CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Electrical Characteristics of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications
Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's

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