Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
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概要
- 論文の詳細を見る
Although LDD nitrogen implantation on NMOSFET can peculiarly improve hot carrier lifetime, it also develops short channel effects and I_<ON>/I_<OFF> characteristic's degradation. On the contrary, nitrogen in PMOSFET results in the improvement of V_<th> roll-off and thus channel length margin. These can be explained by the retardation of boron by nitrogen. Nitrogen directly affects the effective channel length by controlling the boron diffusion in channel direction. We can conclude that the nitrogen implantation technique has some trade-off between the device characteristics and the lifetime reliabilities in NMOSFET, but can provide more channel length margin in PMOSFET.
- 社団法人電子情報通信学会の論文
- 1999-07-22
著者
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hong Soon-kil
Dong Il Technology Ltd.
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Son J‐h
Hyundai Electronics Industries Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Ahn J.-g.
Lg Semicon Co. Ltd. R&d Division
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Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang C.-y.
Lg Semicon Co. Ltd. R&d Division
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Hong S.-K.
LG Semicon Co., Ltd, R&D Division
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Choi J.-H.
LG Semicon Co., Ltd., R&D Division
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Lee S.-G.
LG Semicon Co., Ltd., R&D Division
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Son J.-H.
LG Semicon Co., Ltd., R&D Division
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Hwang J.-M.
LG Semicon Co., Ltd., R&D Division
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Choi J.-h.
Lg Semicon Co. Ltd. R&d Division
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Hong S.-k.
Lg Semicon Co. Ltd R&d Division
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Son J.-h.
Lg Semicon Co. Ltd. R&d Division
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Lee S.-g.
Lg Semicon Co. Ltd. R&d Division
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