Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's

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概要

• 論文の詳細を見る

• We investigate TDDB (Time Dependent Dielectric Breakdown) chracteristics of MOSFETs due to diffusion of hydrogen related species during ILD (Inter-Layer-Dielectric) processing. The ILD films dependent on electron trap generation rate and mobile ion were measured by constant current FN stress method and BTS (Bias Temperature Stress). The results show that the HLD/BPSG and PETEOS/BPSG structure cause more defects inside the gate oxide than the PETEOS/USG. The effect of mobile ion shows no noticeable difference in different dielectric structures. Also, the PETEOS/USG structure shows enhanced gate oxide lifetime but more device degradation possibly due to poor quality Si-SiO_2 interface due to the lower process temperature.

• 社団法人電子情報通信学会の論文
• 1997-07-25

著者

• Kwon Oh-kyong

  Department Of Electrical Engineering Hanyang University

• LEE Young-Jong

  Advanced Technology Laboratory., LG Semicon Co.

• JEONG Ju-Young

  Department of Electrical Engineering The University of Suwon

• LEE Chang-Hyo

  Department of Physics Hanyang University

• Lee sang-Gi

  Dept. of Physics Hanyang Univ.

• Hwang Hyunsang

  Advanced Technology Laboratory., LG Semicon Co.,

• Hwang Jeong-Mo

  Advanced Technology Laboratory., LG Semicon Co.,

• Jeong Ju-Young

  Dept. of Elec. Eng., The Univ. of Suwon.

• Kwon Oh-Kyong

  Dept. of Elec. Eng., Hanyang Univ.

• Lee Chang-Hyo

  Dept. of Physics Hanyang Univ.

• HWANG Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• Kwon O‐k

  Division Of Electrical And Computer Engineering Hanyang University

• Kwon Oh-keun

  Semiconductor Process And Device Laboratory Dept. Of Electronic Engineering Chung-ang University

• Lee S‐g

  Korea Univ. Chungnam Kor

• Lee Y‐j

  Samsung Electronics Co. Ltd. Kyunggi‐do Kor

• Hwang H

  Gwangju Inst. Sci. And Technol. Gwangju Kor

• Hwang H

  Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.

• Hwang Hyunsang

  Advanced Technology Laboratory. Lg Semicon Co.

• Hwang J‐m

  Hyundai Microelectronics Co. Cheongju Kor

• Hwang Jeong-mo

  Hyundai Electronics Industries Co.ltd. Memory R&d Division

• Hwang Jeong-mo

  R&d Division Lg Semicon Co. Ltd.

• Hwang Jeong-mo

  R&d Division Hyundai Microelectronics Co.

• Lee Young-jong

  Lg Semicon. Ltd.

• Lee Young-jong

  Advanced Technology Laboratory Lg Semicon Co. Ltd.

• Hwang Hyunsang

  Advanced Technology Department Ulsi Laboratory Lg Semicon Co. Ltd.

• Lee Young-jong

  Advanced Technology Laboratory. Lg Semicon Co.

• Hwang Jeong-mo

  Advan. Tech. Lab. Lg Semicon Co. Ltd.

• Hwang J.-m.

  Hyundai Electronics Industries Co.ltd. Memory R&d Division

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