Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
スポンサーリンク
概要
- 論文の詳細を見る
The degradation behavior in the remnant polarization (Pr) of sol-gel-derived SrBi_2Ta_2O_9 (SBT) thin films having Pt top and bottom electrodes by annealing under a 5% H_2/95% N_2 atmosphere is investigated. The hydrogen annealing is performed at temperatures ranging from 250℃ to 480℃. By the annealing, the Pr drops to almost zero for all temperatures. Post-annealing at temperatures higher than 700℃ under an air atmosphere recovers the Pr. Interestingly, the recovery is most ineffective for the sample annealed at the Curie temperature (Tc) of the SBT films. A phenomenological model that explains this anomalous recovery behavior is presented.
- 1999-07-23
著者
-
Kwon Oh
School Of Material Science And Engineering Seoul National University
-
Hwang Cheol
Semiconductor R&d Center Samsung Electronics Co.
-
Hwang Cheol
School Of Materials Science And Engineering Seoul National University
-
Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
-
Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
-
Hong Soon-kil
Dong Il Technology Ltd.
-
Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
-
Hwang Cheol
School of Material Science and Engineering, Seoul National University
関連論文
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices
- Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi_2Ta_2O_9/Pt Capacitor(Special Issue on Nonvolatile Memories)
- Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
- Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
- Deposition and Electrical Characterization of Very Thin SrTiO_3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
- Electrical Characterizations of Pt/(Ba,Sr)TiO_3/Pt Planar Capacitors for ULSI DRAM Applications
- Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor
- Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer