Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi_2Ta_2O_9/Pt Capacitor(Special Issue on Nonvolatile Memories)
スポンサーリンク
概要
- 論文の詳細を見る
Effects of imprint on signal margin in FeRAM with Pt/SrBi_2Ta_2O_9/Pt capacitors have been investigated. Imprint, induced during high temperature storage, significantly reduced the signal margin and hence determines lifetime of FeRAM. Initial signal margin of 470mV is reduced to 290mV after storage at 175℃ for 96 hours. From the reduction rate of the signal margin, it is estimated that imprint lifetime of the FeRAM is more than 10 years even though the storage temperature is 175℃.
- 社団法人電子情報通信学会の論文
- 2001-06-01
著者
-
Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Lee Seaung
Memory Research and Development Division, Hynix Semiconductor Inc.
-
Kang Nam
Memory Research and Development Division, Hynix Semiconductor Inc.
-
Kang Y
Hynix Semiconductor Kyoungki‐do Kor
-
Kang N
Hynix Semiconductor Kyoungki‐do Kor
-
Hwang Chi-sun
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
-
Lee Seaung
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
-
KANG Young
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
-
YANG Beelyong
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
-
CHUNG Choong
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
-
KYE Hun
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
-
HONG Suk
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
-
Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
-
Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
-
Kye Hun
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
-
Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Chung Choong
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Yang B
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Kang Y
Feram Device Team Memory R&d Division Hynix Semiconductor
関連論文
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi_2Ta_2O_9/Pt Capacitor(Special Issue on Nonvolatile Memories)
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Low-Voltage Operating Triode-Type Field Emission Displays Controlled by Amorphous-Silicon Thin-Film Transistors
- Characterizations of Fine-pitched Carbon Nanotube Pixels for Field Emitter Arrays
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Ferroelectric Memories using Randomly Oriented (Bi1-xLax)4Ti3O12 Films
- Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory