Ferroelectric Memories using Randomly Oriented (Bi_<1-x>La_x)_4Ti_3O_<12> Films
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Lee S
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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Park Young
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Kang Y
Hynix Semiconductor Kyoungki‐do Kor
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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Noh K
Hynix Semiconductor Incorporated Kyoungki‐do Kor
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YANG Beelyong
Kumoh National Institute of Technology, Department of Materials Science and Engineering
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NOH Keum
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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LEE Seok
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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KIM Nam
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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KWEON Soon
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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YEOM Seung
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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Lee S‐s
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Noh Keum
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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Yang Beelyong
Kumoh National Institute Of Technology Department Of Materials Science And Engineering
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Lee Seok
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Yeom Seung
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kim Nam
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kweon Soon
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
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- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
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- Issues and Reliability of High-Density FeRAMs
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- Invited Status and Future of Emerging Nonvolatile Memories (先端デバイスの基礎と応用に関するアジアワークショップ)
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- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Dielectric Constant of Sintered Compact of Oriented Barium Titanate Short Fibers Doped with Mica
- Thermal Stability and Electrical Properties of SrBi2Ta2-xNbxO9/IrOx Capacitors with Pt Top Electrode
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Ferroelectric Memories using Randomly Oriented (Bi1-xLax)4Ti3O12 Films
- Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Thickness Effects on Physical and Ferroelectric Properties of Bi3.35La0.85Ti3O12 (BLT) Films with $c$-axis-Preferred and Random Orientations