[Invited] Status and Future of Emerging Nonvolatile Memories (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

概要

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As emerging nonvolatile memories, the outstanding issues and challenges of FeRAM, MRAM, and PCM are discussed. FeRAM integration technology has improved to limited production level, however, the cell size and chip size scaling has been limited due to reliability concern. The new architectural approaches are introduced to achieve cell size and chip size scaling without ferroelectric capacitor degradation, which may make FeRAM very close to market. MRAM and PCM operate with same manner, however, PCM is supposed to have wider sensing and process margin than MRAM.
社団法人電子情報通信学会の論文
2003-06-25