Invited Status and Future of Emerging Nonvolatile Memories (先端デバイスの基礎と応用に関するアジアワークショップ)
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概要
- 論文の詳細を見る
As emerging nonvolatile memories, the outstanding issues and challenges of FeRAM, MRAM, and PCM are discussed. FeRAM integration technology has improved to limited production level, however, the cell size and chip size scaling has been limited due to reliability concern. The new architectural approaches are introduced to achieve cell size and chip size scaling without ferroelectric capacitor degradation, which may make FeRAM very close to market. MRAM and PCM operate with same manner, however, PCM is supposed to have wider sensing and process margin than MRAM.
- 社団法人電子情報通信学会の論文
- 2003-06-25
著者
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Lee S‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Kang Hee-bok
Memory Research And Development Division Hynix Semiconductor Inc.
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Hong Suk-Kyoung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Y‐j
Memory Research And Development Division Hynix Semiconductor Inc.
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Park Young-jin
Memory R&d Division Hynix Semiconductor Co.
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Kim Chang-shuk
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Kye-nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Noh Kunm-hwan
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Seaung-Suk
Memory Research and Development Division, Hynix Semiconductor Inc.
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Jang In-Woo
Memory Research and Development Division, Hynix Semiconductor Inc.
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Cho Jun-Hee
Memory Research and Development Division, Hynix Semiconductor Inc.
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Hong Suk-kyoung
Memory Research And Development Division Hynix Semiconductor Inc.
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Hong Suk-kyoung
Memory R&d Division Hynix Semiconductor Inc.
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Lee Seaung-suk
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee S‐s
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Jang In-woo
Memory Research And Development Division Hynix Semiconductor Inc.
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Cho Jun-hee
Memory Research And Development Division Hynix Semiconductor Inc.
関連論文
- Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology
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- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characterization of the Co-Silicide Penetration Depth into the Junction Area
- Device Characteristics and Reliability of Thin Gate Dielectrics Grown by Light Wet Oxynitridation(LWO)
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Invited Status and Future of Emerging Nonvolatile Memories (先端デバイスの基礎と応用に関するアジアワークショップ)
- [Invited] Status and Future of Emerging Nonvolatile Memories (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Status and Future of Emerging Nonvolatile Memories
- Status and Future of Emerging Nonvolatile Memories
- Study on Polarization Properties of Randomly Oriented Bi3.35La0.85Ti3O12 Ferroelectric Thin Film Utilizing Three-Dimensional Piezoresponse Image