Device Characteristics and Reliability of Thin Gate Dielectrics Grown by Light Wet Oxynitridation(LWO)
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Park Young-jin
Memory R&d Division Hynix Semiconductor Co.
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Park Young-jin
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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JOO Moon-Sig
Memory R&D Division, Hynix Semiconductor Inc.
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LEE Seok-Kiu
Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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KIM Jong-Choul
Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Joo Moon-sig
Memory R&d Division Hynix Semiconductor Inc.
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Joo Moon-sig
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lee Seok-kiu
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Jong-choul
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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- Device Characteristics and Reliability of Thin Gate Dielectrics Grown by Light Wet Oxynitridation(LWO)
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