Study on Polarization Properties of Randomly Oriented Bi3.35La0.85Ti3O12 Ferroelectric Thin Film Utilizing Three-Dimensional Piezoresponse Image
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概要
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We investigated the domain structures of randomly oriented Bi3.35La0.85Ti3O12 (BLT) ferroelectric thin films by mapping the three-dimensional piezoresponse images of the film. Such BLT films were prepared by the sol–gel method. The domain arrangement in the patterned BLT thin films without a top electrode was recorded along all three components of the $x$-, $y$- and $z$-axes by monitoring lateral deflection and vertical displacement. In particular, to obtain lateral deflection along the $y$-axis, the patterned sample was physically rotated by 90°. In addition, polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. We observed that various types of domain behavior such as 54.7° and 90° domain switchings, and pinned domain formation occurred.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Hong Suk-kyoung
Memory R&d Division Hynix Semiconductor Inc.
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HEO Jinhee
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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Chung Ilsub
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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Heo Jinhee
School of Information and Communications Engineering, SungKyunKwan University, 300, Chunchun-Dong, Jangan-Ku, Suwon 440-746, Korea
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Chung Ilsub
School of Information and Communications Engineering, SungKyunKwan University, 300, Chunchun-Dong, Jangan-Ku, Suwon 440-746, Korea
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Choi Seokheun
School of Information and Communications Engineering, SungKyunKwan University, 300, Chunchun-Dong, Jangan-Ku, Suwon 440-746, Korea
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- Study on Polarization Properties of Randomly Oriented Bi3.35La0.85Ti3O12 Ferroelectric Thin Film Utilizing Three-Dimensional Piezoresponse Image