Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-30
著者
-
Lee Seaung-suk
New Device Team Memory R&d Division Hynix Semiconductor Inc.
-
Park Young-jin
New Device Team Memory R&d Division Hynix Semiconductor Inc.
-
Kang Y
Hynix Semiconductor Incorporated Kyoungki‐do Kor
-
Noh K
Hynix Semiconductor Incorporated Kyoungki‐do Kor
-
NOH Keum
New Device Team, Memory R&D Division, Hynix Semiconductor Inc.
-
KANG Young
New Device Team, Memory R&D Division, Hynix Semiconductor Inc.
-
YANG Beelyong
New Device Team, Memory R&D Division, Hynix Semiconductor Inc.
-
LEE Seok
New Device Team, Memory R&D Division, Hynix Semiconductor Inc.
-
Yang Beelyong
New Device Team Memory R&d Division Hynix Semiconductor Inc.
-
Kang Young
New Device Team Memory R&d Division Hynix Semiconductor Inc.
-
Lee Seok
New Device Team Memory R&d Division Hynix Semiconductor Inc.
-
Noh Keum
New Device Team, Memory R&D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea
関連論文
- Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures
- Issues and Reliability of High-Density FeRAMs
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
- Issues and Reliability of High-Density FeRAMs
- Imprint Characteristics of Ferroelectric Thin Films at Elevated Storage and Operation Temperatures
- Issues and Reliability of High-Density FeRAMs